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Same model may have multiple batches, images only for reference.
SPP80N08S2-07 Real Image
Same model may have multiple batches, images only for reference.

SPP80N08S2-07

Part No SPP80N08S2-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A TO-220
Datasheet
SPP80N08S2-07 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 6130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 7.4 mOhm @ 66A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 065974-SPP80N08S2-07
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPP80N08S2-07 CAD Model

Description

The SPP80N08S2-07 is an N-channel MOSFET manufactured by Infineon Technologies. The SPP80N08S2-07 is an N-channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Rds On: 7.4 mOhm @ 66A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 6130pF @ 25V
  • Packaging: PG-TO220-3-1
  • Status: Obsolete (EOL)

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