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Same model may have multiple batches, images only for reference.
IRF6715MTRPBF
Same model may have multiple batches, images only for reference.

IRF6715MTRPBF

Part No IRF6715MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 34A DIRECTFET
Datasheet
IRF6715MTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 100μA
Max Gate Charge 59nC @ 4.5V
Max Input Capacitance 5340pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 34A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 017479-IRF6715MTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF6715MTRPBF CAD Model

Description

The IRF6715MTRPBF is a N-Channel MOSFET Transistor from Infineon Technologies with a drain-source voltage of 25V and a continuous drain current of 34A (Ta), 180A (Tc) @ 25°C.

  • Maximum Power Dissipation: 2.8W (Ta), 78W (Tc)
  • Gate-Source Threshold Voltage: 2.4V @ 100μA
  • Maximum Rds On at Id, Vgs: 1.6 mOhm @ 34A, 10V
  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Commonly used in: Discrete Semiconductor Products
  • Market Popularity: high
  • Supply and Demand Status: sufficient

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30+ $3.3762 $101.2860
46+ $3.2707 $150.4522
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82+ $3.0597 $250.8954
110+ $2.7432 $301.7520
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