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Same model may have multiple batches, images only for reference.
IRF6725MTRPBF
Same model may have multiple batches, images only for reference.

IRF6725MTRPBF

Part No IRF6725MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 28A DIRECTFET
Datasheet
IRF6725MTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 28A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 54nC @ 4.5V
Max Input Capacitance 4700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 100W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 28A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 118809-IRF6725MTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6725MTRPBF CAD Model

Description

The 118809-IRF6725MTRPBF is a high-performance N-channel MOSFET from Infineon Technologies that is commonly used in various electronic applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 28A (Ta), 170A (Tc) @ 25°C
  • Maximum Rds On: 2.2 mOhm @ 28A, 10V
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Maximum Gate Charge: 54nC @ 4.5V
  • Maximum Input Capacitance: 4700pF @ 15V
  • Package: DirectFET MX case
  • Mountable using: SMD (SMT) technology
  • Supplied in a quantity of: 1 per package

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