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IRF6893MTRPBF

Part No IRF6893MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 29A DIRECTFET  /  N-Channel 25 V 29A (Ta), 168A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount DIRECTFET™ MX
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 168A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3480 pF @ 13 V
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001531710
Standard Package 4,800
Win Source Part Number 1107306-IRF6893MTRPBF
Ultra Librarian 3D Model Ultra Librarian IRF6893MTRPBF CAD Model

Description

The IRF6893MTRPBF is a high-performance OptiMOS™ power MOSFET from Infineon Technologies, designed for synchronous rectification in high-frequency DC-DC converters and other power management applications. This device utilizes advanced trench technology to minimize on-state resistance (RDS(on)) and gate charge (Qg), resulting in superior efficiency and reduced power losses. The IRF6893MTRPBF is optimized for high-frequency operation and is available in a compact PQFN package for improved thermal performance.

Applications:

  • Synchronous rectification in DC-DC converters
  • Point-of-Load (POL) converters
  • Server and telecom power supplies
  • Notebook and desktop computer power systems
  • Battery management systems
  • High-frequency switching applications
  • OR-ing applications

Features:

  • Low on-resistance (RDS(on))
  • Low gate charge (Qg) and gate resistance (Rg)
  • Optimized for high-frequency switching
  • Avalanche rated
  • Logic level drive
  • RoHS compliant
  • Halogen-free according to IEC61249-2-21
  • PQFN package for enhanced thermal performance

Benefits:

  • Improved energy efficiency due to reduced conduction and switching losses.
  • Higher power density due to the compact PQFN package and efficient thermal management.
  • Simplified gate drive circuitry.
  • Enhanced reliability due to its avalanche capability.
  • Environmentally friendly due to RoHS compliance and halogen-free design.
  • Optimized for high-frequency operation, enabling smaller component sizes in power converters.

Additional Details:

The IRF6893MTRPBF features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 46A at 25°C. Its low RDS(on) value minimizes conduction losses, while the low Qg and Rg enable fast and efficient switching. The device is designed to operate at high frequencies, making it suitable for modern power supply architectures. The PQFN package provides excellent thermal performance, allowing for efficient heat dissipation and higher power handling capabilities. The combination of these features makes the IRF6893MTRPBF an ideal choice for high-efficiency, high-density power conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1282 $59.4358
46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 133,900 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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