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Same model may have multiple batches, images only for reference.
IRF7106
Same model may have multiple batches, images only for reference.

IRF7106

Part No IRF7106
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 3A/2.5A 8-SOIC
Datasheet
IRF7106 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A, 2.5A
Maximum Rds On at Id,Vgs 125 mOhm @ 1A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 300pF @ 15V
Maximum Power Dissipation 2W
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 205308-IRF7106
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7106 CAD Model

Description

The 205308-IRF7106 is a standard N and P-Channel MOSFET from Infineon Technologies that is commonly used in various electronic applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3A, 2.5A @ 25°C
  • Maximum Rds On: 125 mOhm @ 1A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 300pF @ 15V
  • Package: 8-SO case
  • Mountable using: SMD (SMT) technology
  • Supplied in: a limited supply

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6468 $58.2120
220+ $0.5313 $116.8860
340+ $0.5140 $174.7600
465+ $0.4978 $231.4770
600+ $0.4816 $288.9600
805+ $0.4320 $347.7600
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Availability: 47,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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