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Same model may have multiple batches, images only for reference.
IRF7322D1
Same model may have multiple batches, images only for reference.

IRF7322D1

Part No IRF7322D1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.3A 8-SOIC
Datasheet
IRF7322D1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 780pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 62 mOhm @ 2.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 133107-IRF7322D1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7322D1 CAD Model

Description

The IRF7322D1 is a P-Channel MOSFET manufactured by Infineon Technologies.

  • Feature: Schottky Diode (Isolated)
  • Maximum Power Dissipation: 2W (Ta)
  • Packaging: Tube/Rail
  • Mounting: SMD (SMT) technology
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 5.3A (Ta)
  • Maximum Gate-Source Voltage: ±12V

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