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IRF7463PBF

Part No IRF7463PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 51nC @ 4.5V
Max Input Capacitance 3150pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001867-IRF7463PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7463PBF CAD Model

Description

The Infineon Technologies 001867-IRF7463PBF is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current @ 25°C of 14A (Ta).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14A (Ta) @ 25°C
  • Maximum Rds On @ Id,Vgs: 8 mOhm @ 14A, 10V
  • Maximum Gate-Source Voltage: ±12V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Max Input Capacitance: 3150pF @ 15V
  • Maximum Power Dissipation: 2.5W (Ta)
  • Package: 8-SO
  • Suitable for: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.7352 $51.6168
22+ $4.7059 $103.5298
33+ $4.5588 $150.4404
46+ $4.4117 $202.9382
59+ $4.2647 $251.6173
79+ $3.8235 $302.0565
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,770 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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