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IRF7464TRPBF Infineon Technologies IRF7464TRPBF Real Image
Same model may have multiple batches, images only for reference.
IRF7464TRPBF Infineon Technologies IRF7464TRPBF Real Image
IRF7464TRPBF Infineon Technologies IRF7464TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7464TRPBF

Part No IRF7464TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 1.2A 8-SOIC
Datasheet
IRF7464TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 280pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 730 mOhm @ 720mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046657-IRF7464TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Wireless, Communications & Networking, Computers & Computer Peripherals
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7464TRPBF CAD Model

Description

The IRF7464TRPBF is a N-Channel MOSFET with a drain-source breakdown voltage of 200V manufactured by .

  • Maximum Continuous Drain Current: 1.2A @ 25°C
  • Maximum Rds On @ Id,Vgs: 730 mOhm @ 720mA, 10V
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V

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