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IRF7466PBF

Part No IRF7466PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 2100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046659-IRF7466PBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7466PBF CAD Model

Description

The Infineon Technologies MOSFET is an N-channel polarity transistor with a maximum power dissipation of 2.5W (Ta).

  • Polarity: N-channel
  • Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A (Ta)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Protection Features: Over current, over temperature, short circuit
  • Maximum Gate-Source Voltage: ±20V
  • Applications: Power management and industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.6988 $64.1928
14+ $8.7780 $122.8920
21+ $8.5043 $178.5903
29+ $8.2294 $238.6526
37+ $7.9556 $294.3572
49+ $7.1321 $349.4729
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,970 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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Shipping Information

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