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Same model may have multiple batches, images only for reference.
IRF7471TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7471TRPBF

Part No IRF7471TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 10A 8-SOIC
Datasheet
IRF7471TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 32nC @ 4.5V
Max Input Capacitance 2820pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046665-IRF7471TRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7471TRPBF CAD Model

Description

The Infineon Technologies IRF7471TRPBF is a medium-popularity MOSFET that is obsolete (EOL).

  • Package: 8-SO
  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 10A (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Rds On: 13 mOhm @ 10A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA.

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