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IRF7477TR

Part No IRF7477TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 38nC @ 4.5V
Max Input Capacitance 2710pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046669-IRF7477TR
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF7477TR CAD Model

Description

The Infineon Technologies IRF7477TR is an N-channel MOSFET that has a drain-source breakdown voltage of 30V.

  • Drain-Source Breakdown Voltage: 30V
  • Mounting: surface-mount device
  • Package: 8-SOIC package
  • Maximum Power Dissipation: 2.5W (Ta)
  • Continuous Drain Current: 14A (Ta)
  • Maximum Rds On: 8.5 mOhm @ 14A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 38nC @ 4.5V
  • Component Popularity: medium
  • Supply and Demand Status: balanced
  • Common Applications: industrial power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2166 $50.9010
565+ $0.1778 $100.4570
875+ $0.1722 $150.6750
1,200+ $0.1667 $200.0400
1,555+ $0.1611 $250.5105
2,080+ $0.1444 $300.3520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,068 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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