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IRF7490PBF

Name: IRF7490PBF
Brand: Infineon Technologies
SKU: 159978
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7490PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 5.4A 8-SOIC
Datasheet	IRF7490PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Not For New Designs
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	56nC @ 10V
Max Input Capacitance	1720pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	39 mOhm @ 3.2A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	069373-IRF7490PBF
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF7490PBF CAD Model

Description

The Infineon Technologies 069373-IRF7490PBF is an N-channel MOSFET designed for discrete semiconductor applications.

Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 5.4A @ 25°C
Maximum Rds On at Id, Vgs: 39 mOhm @ 3.2A, 10V
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 56nC @ 10V
Package: 8-SO
Temperature Range: -55°C to 150°C (TJ)
Recommendation: Not recommended for new designs

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
90+	$0.6569	$59.1210
215+	$0.5391	$115.9065
335+	$0.5222	$174.9370
460+	$0.5054	$232.4840
595+	$0.4885	$290.6575
795+	$0.4380	$348.2100

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 34,510 pieces

MOQ: 90 pcs

Order Increment : 1 pcs

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