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IRF7521D1

Part No IRF7521D1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.4A MICRO-8
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 8nC @ 4.5V
Max Input Capacitance 260pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 135 mOhm @ 1.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 1046675-IRF7521D1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7521D1 CAD Model

Description

This electronic component is a MOSFET with the Win Source Part Number 1046675-IRF7521D1. It belongs to the Micro8 series of electronic components and falls under the category of discrete semiconductor products. The MOSFET has a breakdown voltage of 20V and a continuous drain current of 2.4A. It has a gate-source threshold voltage of 700mV and a maximum gate charge of 8nC. The MOSFET is designed to handle high power and is widely used in electronic devices like power supplies, motor control, and more.

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Pricing & Ordering

Quantity Unit Price Ext. Price
340+ $0.1721 $58.5140
820+ $0.1409 $115.5380
1,275+ $0.1363 $173.7825
1,755+ $0.1317 $231.1335
2,255+ $0.1282 $289.0910
3,035+ $0.1143 $346.9005
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,260 pieces
MOQ: 340 pcs
Order Increment : 1 pcs
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