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Same model may have multiple batches, images only for reference.
IRF7526D1PBF
Same model may have multiple batches, images only for reference.

IRF7526D1PBF

Part No IRF7526D1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2A MICRO8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 180pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 200 mOhm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro8
Dimension 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Win Source Part Number 069380-IRF7526D1PBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 80
Ultra Librarian 3D Model Ultra Librarian IRF7526D1PBF CAD Model

Description

The Infineon Technologies IRF7526D1PBF is a P-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 2A @ 25°C.

  • Maximum On-Resistance: 200mOhm @ 1.2A and 10V
  • Gate Charge: 11nC @ 10V
  • Package: micro8
  • Mounting: SMD (SMT)
  • Technology: MOSFET
  • Temperature Range: -55°C to 150°C (TJ)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6435 $57.9150
220+ $0.5281 $116.1820
340+ $0.5116 $173.9440
470+ $0.4950 $232.6500
605+ $0.4786 $289.5530
810+ $0.4290 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 735 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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