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Same model may have multiple batches, images only for reference.
IRF7700 Real Image
Same model may have multiple batches, images only for reference.

IRF7700

Part No IRF7700
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 8.6A 8-TSSOP
Datasheet
IRF7700 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 89nC @ 5V
Max Input Capacitance 4300pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 8.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046685-IRF7700
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7700 CAD Model

Description

The Infineon Technologies IRF7700 is a P-channel MOSFET that is designed for high-speed switching applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8.6A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 89nC @ 5V
  • Maximum Rds On: 15 mOhm @ 8.6A and 4.5V
  • Operating Temperature: -55°C to 150°C
  • Package: 8-TSSOP
  • Status: Discontinued and has a medium popularity rating in the market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6513 $57.7955
75+ $1.3550 $101.6250
115+ $1.3126 $150.9490
160+ $1.2703 $203.2480
205+ $1.2279 $251.7195
275+ $1.1009 $302.7475
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