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Same model may have multiple batches, images only for reference.
IRF7706TR Real Image
Same model may have multiple batches, images only for reference.

IRF7706TR

Part No IRF7706TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7A 8-TSSOP
Datasheet
IRF7706TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2211pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.51W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1046698-IRF7706TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7706TR CAD Model

Description

The Infineon Technologies IRF7706TR is a P-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a maximum continuous drain current of 7A @ 25°C.

  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Input Capacitance: 2211pF @ 25V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 7A, 10V
  • Package: 8-TSSOP
  • Suitable For: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Popularity Rating: Medium

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