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IRF7749L2TRPBF Real Image

Same model may have multiple batches, images only for reference.

IRF7749L2TRPBF Real Image

Same model may have multiple batches, images only for reference.

IRF7749L2TRPBF

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IRF7749L2TRPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	Benchmark MOSFETs Product Selection Guide \| MOSFET N-CH 60V DIRECTFET L8
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	60V
Id - Continuous Drain Current	33A, 375A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	1.5mOhm at 120A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	300nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	12320pF at 25V
Power Dissipation (Maximum)	3.3W, 125W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	DIRECTFET L8
Manufacturer Package	DirectFET Isometric L8
Manufacturer Pack Quantity	1
MSL Level	1 (Unlimited)
Win Source Part Number	758584-IRF7749L2TRPBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF7749L2TRPBF CAD Model

Alternative Products

Description

The Infineon Technologies IRF7749L2TRPBF is a high-performance N-Channel MOSFET designed for use in high power applications.

On-Resistance: 1.5 mOhm @ 120A
Drain-Source Breakdown Voltage: 60V
Package: DirectFET Isometric L8
Halogen-Free Compliant: Yes
Supply and Demand: Balanced
Power Dissipation: 3.3W and 125W

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
5+	$11.7294	$58.6470
11+	$9.6241	$105.8651
17+	$9.3234	$158.4978
23+	$9.0226	$207.5198
29+	$8.7219	$252.9351
39+	$7.8196	$304.9644

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Availability: 6,770 pieces

MOQ: 5 pcs

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