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Same model may have multiple batches, images only for reference.
IRF7751 Real Image
Same model may have multiple batches, images only for reference.

IRF7751

Part No IRF7751
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 4.5A 8-TSSOP
Datasheet
IRF7751 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 35 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1464pF @ 25V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1046705-IRF7751
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7751 CAD Model

Description

The Infineon Technologies MOSFET is a dual P-Channel power transistor designed for use in applications that require high power dissipation of up to 1W and a drive voltage of up to 10V.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 44nC @ 10V
  • Maximum Input Capacitance: 1464pF @ 25V
  • Package: 8-TSSOP case
  • Mounting: SMD (SMT) technology
  • Status: Obsolete component
  • Category: Discrete Semiconductor Products
  • Popularity Rating: Medium

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