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Same model may have multiple batches, images only for reference.
IRF7756TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7756TRPBF

Part No IRF7756TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4.3A 8TSSOP
Datasheet
IRF7756TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.3A
Maximum Rds On at Id,Vgs 40 mOhm @ 4.3A, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 1400pF @ 10V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1046715-IRF7756TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7756TRPBF CAD Model

Description

The IRF7756TRPBF is a 2 P-channel (dual) logic level gate FET type electronic component manufactured by Infineon Technologies.

  • Package/Case: 8-TSSOP
  • Mounting Type: SMD (SMT)
  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.3A @ 25°C
  • Gate-Source Threshold Voltage: 900mV @ 250μA
  • Max Gate Charge: 18nC @ 4.5V
  • Max Input Capacitance: 1400pF @ 10V
  • Maximum Rds On @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
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Availability: 6,200 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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