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Same model may have multiple batches, images only for reference.
IRF7757TR Real Image
Same model may have multiple batches, images only for reference.

IRF7757TR

Part No IRF7757TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4.8A TSSOP-8
Datasheet
IRF7757TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.8A
Maximum Rds On at Id,Vgs 35 mOhm @ 4.8A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 1340pF @ 15V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1046716-IRF7757TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7757TR CAD Model

Description

The Infineon Technologies 1046716-IRF7757TR is a dual N-channel logic level gate FET with a maximum power dissipation of 1.2W.

  • Power Dissipation (Max): 1.2W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.8A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Gate Charge (Max): 23nC @ 4.5V
  • Input Capacitance (Max): 1340pF @ 15V
  • Rds On (Max): 35 mOhm @ 4.8A, 4.5V
  • Package: 8-TSSOP
  • Category: Discrete Semiconductor Products
  • Status: Obsolete
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6299 $59.8405
225+ $0.5170 $116.3250
350+ $0.5008 $175.2800
480+ $0.4846 $232.6080
620+ $0.4685 $290.4700
830+ $0.4200 $348.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,720 pieces
MOQ: 95 pcs
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