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IRF7807D1TRPBF

Part No IRF7807D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 5V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046727-IRF7807D1TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7807D1TRPBF CAD Model

Description

The 1046727-IRF7807D1TRPBF from Infineon Technologies is an obsolete (EOL) electronic component with a medium popularity and a sufficient supply and demand status.

  • Component Type: MOSFET with Schottky Diode (Isolated)
  • Channel Polarity: N-Channel
  • Maximum Power Dissipation: 2.5W (Ta)
  • Continuous Drain Current: 8.3A (Ta) @ 25°C
  • Packaging: Reel-TR
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9390 $61.0350
150+ $0.7704 $115.5600
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6988 $290.0020
555+ $0.6260 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,953 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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