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IRF7807TR

Part No IRF7807TR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 30V 8.3A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 8.3A
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Maximum) at Id, Vgs 25mOhm at 7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 17nC at 5V
Gate Source Voltage (Maximum) ±12V
Power Dissipation (Maximum) 2.5W
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 710505-IRF7807TR
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7807TR CAD Model

Description

The Infineon Technologies MOSFET, IRF7807TR, is a N-Channel transistor with a drain-source voltage rating of 30V and a maximum continuous drain current of 8.3A. The device has a maximum power dissipation of 2.5W and is packaged in an 8-SOIC package.

  • Drain-source voltage: 30V
  • Maximum continuous drain current: 8.3A
  • Maximum power dissipation: 2.5W
  • Package: 8-SOIC
  • Gate-source voltage threshold: 1V @ 250μA
  • Maximum gate charge: 17nC @ 5V
  • Gate-source voltage: ±12V

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,200 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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