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Same model may have multiple batches, images only for reference.
IRF7809A Real Image
Same model may have multiple batches, images only for reference.

IRF7809A

Part No IRF7809A
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Chipset for DC-DC Converters | MOSFET N-CH 30V 14.5A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 14.5A
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Maximum) at Id, Vgs 8.5mOhm at 15A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 75nC at 5V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 7300pF at 16V
Power Dissipation (Maximum) 2.5W
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 95
MSL Level 1 (Unlimited)
Win Source Part Number 1187359-IRF7809A
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7809A CAD Model

Description

The Infineon Technologies MOSFET is a high-performance transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 14.5A.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14.5A
  • Maximum Power Dissipation: 2.5W
  • Gate-Source Voltage: ±12V
  • Transistor Polarity: N-channel
  • Input Capacitance: 7300pF @ 16V
  • Drive Voltage: Maximum of 4.5V to a minimum of 4.5V
  • Rds On (Maximum) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
  • Package: 8-SOIC

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Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
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