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IRF7811AVTRPBF-1

Part No IRF7811AVTRPBF-1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.8A 8SO / N-Channel 30 V 10.8A (Ta) 2.5W (Ta) Surface Mount 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1801 pF @ 10 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 4,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875052-IRF7811AVTRPBF-1
Ultra Librarian 3D Model Ultra Librarian IRF7811AVTRPBF-1 CAD Model

Description

The IRF7811AVTRPBF-1 is an N-Channel MOSFET transistor from the HEXFET® series. It comes in a tape and reel package with a standard package of 4,000 pieces.

  • Drain-to-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 10.8A @ 25°C (Ta)
  • Maximum On-Resistance (Rds On): 14mOhm @ an Id of 15A and Vgs of 4.5V
  • Gate Threshold Voltage (Vgs(th)): 3V @ an Id of 250µA
  • Power Dissipation: 2.5W @ a temperature range of -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,720 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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