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IRF7811AVTRPBF

Part No IRF7811AVTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 26nC @ 5V
Max Input Capacitance 1801pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 15A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001947-IRF7811AVTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF7811AV
Introduction Date August 17, 2004
ECCN EAR99
Country of Origin China, Thailand
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IRF7811AVTRPBF CAD Model

Description

The Infineon IRF7811AVTRPBF is a high-performance N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 10.8A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 26nC @ 5V
  • Package: 8-SO
  • Temperature Rating: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.6418 $58.2090
11+ $9.5523 $105.0753
17+ $9.2538 $157.3146
23+ $8.9553 $205.9719
29+ $8.6568 $251.0472
39+ $7.7612 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,072 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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