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Same model may have multiple batches, images only for reference.
IRF7902PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7902PBF

Part No IRF7902PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
Datasheet
IRF7902PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.4A, 9.7A
Maximum Rds On at Id,Vgs 22.6 mOhm @ 6.4A, 10V
Gate-Source Threshold Voltage 2.25V @ 25μA
Max Gate Charge 6.9nC @ 4.5V
Max Input Capacitance 580pF @ 15V
Maximum Power Dissipation 1.4W, 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046742-IRF7902PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7902PBF CAD Model

Description

The Infineon Technologies 1046742-IRF7902PBF is a dual N-channel Logic Level Gate FET designed for use in discrete semiconductor products.

  • Status: Obsolete (EOL)
  • Maximum Power Dissipation: 1.4W, 2W
  • Drain-Source Breakdown Voltage: 30V
  • Temperature Range: -55°C to 150°C (TJ)
  • Continuous Drain Current @ 25°C: 6.4A, 9.7A
  • Gate-Source Threshold Voltage @ 25μA: 2.25V
  • Maximum Gate Charge @ 4.5V: 6.9nC
  • Maximum Input Capacitance @ 15V: 580pF
  • Maximum Rds on @ 6.4A, 10V: 22.6 mOhm
  • Package: 8-SO
  • Packaging: Tube/Rail

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3858 $57.8700
365+ $0.3176 $115.9240
565+ $0.3072 $173.5680
780+ $0.2968 $231.5040
1,005+ $0.2876 $289.0380
1,350+ $0.2576 $347.7600
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Availability: 18,500 pieces
MOQ: 150 pcs
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