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Same model may have multiple batches, images only for reference.
IRF8010SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8010SPBF

Part No IRF8010SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A D2PAK
Datasheet
IRF8010SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3830pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 260W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 121074-IRF8010SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF8010SPBF CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 121074-IRF8010SPBF is an N-channel power MOSFET that has a maximum power dissipation of 260W (Tc) and a drain-source breakdown voltage of 100V.

  • Continuous Drain Current @ 25°C: 80A (Tc)
  • Maximum Rds On @ Id,Vgs: 15 mOhm @ 45A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 3830pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D2PAK
  • Temperature Range: -55°C to 175°C (TJ)
  • Ideal for: Use in discrete semiconductor products

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85+ $1.7714 $150.5690
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202+ $1.4857 $300.1114
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