The IRFP90N20D from International Rectifier is a 200V, single P-Channel HEXFET Power MOSFET. This device is designed for a wide range of power applications, offering efficient performance and robust construction. It is commonly used in designs requiring high voltage and current handling capabilities.

Applications:

• High-frequency isolated DC-DC converters
• Uninterruptible Power Supplies (UPS)
• Motor control circuits
• High-efficiency synchronous rectification
• Hard switched and high frequency circuits

Features:

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated

Benefits:

• Improved efficiency due to low on-resistance (RDS(on))
• Increased system reliability due to high avalanche capability
• Simplified thermal management with a low thermal resistance junction-to-case
• Reduced switching losses due to fast switching speed
• Enhanced system performance in high-temperature environments

Detailed Specifications:

• Drain to Source Voltage (Vdss): 200V
• Gate to Source Voltage (Vgs): ±20V
• Continuous Drain Current (Id): -90A
• Pulsed Drain Current (Idm): -360A
• Power Dissipation (Pd): 330W
• Operating Temperature: -55°C to +175°C
• RDS(on) @ Vgs=10V: 0.040 Ohms
• Gate Charge (Qg): 240nC
• Package: TO-247AC