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Same model may have multiple batches, images only for reference.
IRF8302MTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8302MTRPBF

Part No IRF8302MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 31A MX
Datasheet
IRF8302MTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 31A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 150μA
Max Gate Charge 53nC @ 4.5V
Max Input Capacitance 6030pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 31A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 111061-IRF8302MTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF8302MTRPBF CAD Model

Description

The Infineon Technologies IRF8302MTRPBF is an N-channel MOSFET with a maximum power dissipation of 2.8W (Ta) and 104W (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 31A (Ta) and 190A (Tc)
  • Maximum Rds On: 1.8 mOhm @ Id,Vgs of 31A, 10V
  • Suitable for: Power supply, motor control, and lighting
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.35V @ 150μA
  • Package: DIRECTFET MX
  • Mounting: SMD (SMT) technology
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
9+ $5.7800 $52.0200
22+ $4.7425 $104.3350
33+ $4.5943 $151.6119
45+ $4.4461 $200.0745
59+ $4.2979 $253.5761
78+ $3.8533 $300.5574
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Availability: 9,000 pieces
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