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Same model may have multiple batches, images only for reference.
SQD50N04-5M6_GE3 Real Image
Same model may have multiple batches, images only for reference.

SQD50N04-5M6_GE3

Part No SQD50N04-5M6_GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A TO-252
Datasheet
SQD50N04-5M6_GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 4000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 5.6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101730-SQD50N04-5M6_GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SQD50N04-5M6_GE3 CAD Model

Description

The Vishay SQD50N04-5M6_GE3 is an N-channel MOSFET component manufactured by Vishay.

  • Channel Type: N-channel
  • Product Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 71W (Tc)
  • Case/Package: TO-252
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 50A (Tc)
  • Gate-Source Threshold Voltage: 3.5V @ 250μA
  • Maximum Gate Charge: 85nC @ 10V
  • Maximum Input Capacitance: 4000pF @ 25V
  • Maximum Rds On @ Id,Vgs: 5.6 mOhm @ 20A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8778 $52.6680
140+ $0.7203 $100.8420
215+ $0.6978 $150.0270
300+ $0.6753 $202.5900
385+ $0.6527 $251.2895
515+ $0.5852 $301.3780
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Availability: 88,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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