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Same model may have multiple batches, images only for reference.
IRF8721GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8721GTRPBF

Part No IRF8721GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A 8-SOIC
Datasheet
IRF8721GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 1040pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046764-IRF8721GTRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF8721GTRPBF CAD Model

Description

The Infineon Technologies IRF8721GTRPBF is an N-channel MOSFET with a maximum power dissipation of 2.5W (Ta).

  • Power Dissipation: 2.5W (Ta)
  • Mounting: Surface-mount device
  • Package: 8-SO
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 14A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 12nC @ 4.5V
  • Status: Active product
  • Popularity: Medium
  • Application: Industrial power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
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