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Same model may have multiple batches, images only for reference.
IRF8910GTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8910GTRPBF

Part No IRF8910GTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 10A 8-SOIC
Datasheet
IRF8910GTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A
Maximum Rds On at Id,Vgs 13.4 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 960pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046766-IRF8910GTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF8910GTRPBF CAD Model

Description

The Infineon Technologies 1046766-IRF8910GTRPBF is a Dual N-Channel MOSFET with a Logic Level Gate.

  • Temperature Range: -55°C to 150°C
  • Package: 8-SO
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 10A @ 25°C
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Input Capacitance: 960pF @ 10V
  • Maximum Rds On: 13.4 mOhm @ 10A, 10V.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4338 $50.1830
85+ $1.1765 $100.0025
135+ $1.1397 $153.8595
185+ $1.1030 $204.0550
235+ $1.0662 $250.5570
315+ $0.9559 $301.1085
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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