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IRF9321TRPBF Real Image IRF9321TRPBF Real Image1 IRF9321TRPBF Real Image2
Same model may have multiple batches, images only for reference.
IRF9321TRPBF Real Image IRF9321TRPBF Real Image1 IRF9321TRPBF Real Image2
IRF9321TRPBF Real Image IRF9321TRPBF Real Image1 IRF9321TRPBF Real Image2
Same model may have multiple batches, images only for reference.

IRF9321TRPBF

Part No IRF9321TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 15A 8-SOIC
Datasheet
IRF9321TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 50μA
Max Gate Charge 98nC @ 10V
Max Input Capacitance 2590pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 7.2 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 104241-IRF9321TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF9321TRPBF CAD Model

Description

The Infineon Technologies IRF9321TRPBF is a P-channel MOSFET designed for use in a variety of applications, including power supplies, motor control, and lighting.

  • Maximum Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 50μA
  • Maximum Gate Charge: 98nC @ 10V
  • Package: 8-SO
  • Compliance: Halogen-free
  • Supply and Demand: Sufficient

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