IRF9530NSPBF P-Channel MOSFET from Infineon Technologies

The IRF9530NSPBF is a P-Channel MOSFET from Infineon Technologies that is designed for a wide range of applications, including motor control, power management, and switching. It is a Fifth Generation HEXFET® MOSFET, which means that it benefits from the latest in processing techniques to achieve extremely low on-resistance per silicon area. This, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The IRF9530NSPBF has a drain-source voltage rating of 100V and a continuous drain current rating of 14A at 25°C. It has a low on-resistance of 200mΩ at 8.4A and 10V, which makes it very efficient in switching applications. The MOSFET is also very fast switching, with a typical rise time of 15ns and a typical fall time of 12ns.

The IRF9530NSPBF is packaged in a TO-252-3 surface mount package, which is suitable for high current applications. It has a low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Features and Benefits

Extremely low on-resistance per silicon area Fast switching speed Ruggedized device design High power capability Low internal connection resistance High efficiency Wide range of applications Applications

Motor control Power management Switching High current applications Typical Applications

DC motor drivers AC motor controllers LED drivers Power supplies Battery management systems Load switching Conclusion

The IRF9530NSPBF is a versatile and powerful P-Channel MOSFET that is suitable for a wide range of applications. It is highly efficient and reliable, and it can handle high currents. The IRF9530NSPBF is a good choice for any application where a high-performance MOSFET is needed.