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Same model may have multiple batches, images only for reference.
IRF9530NSTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9530NSTRRPBF

Part No IRF9530NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 14A D2PAK
Datasheet
IRF9530NSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 79W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046781-IRF9530NSTRRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9530NSTRRPBF CAD Model

Description

The Infineon Technologies MOSFET is a P-Channel Power MOSFET that is designed for high-performance applications.

  • Channel Type: P-Channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Rds On: 200 mOhm @ 8.4A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 58nC @ 10V
  • Input Capacitance: 760pF @ 25V
  • Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Power Dissipation: 3.8W (Ta), 79W (Tc)
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3576 $50.0640
300+ $0.3346 $100.3800
465+ $0.3230 $150.1950
670+ $0.3000 $201.0000
870+ $0.2884 $250.9080
1,085+ $0.2769 $300.4365
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Availability: 26,620 pieces
MOQ: 140 pcs
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