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IRF9910TRPBF Real Image IRF9910TRPBF real image315
Same model may have multiple batches, images only for reference.
IRF9910TRPBF Real Image IRF9910TRPBF real image315
IRF9910TRPBF Real Image IRF9910TRPBF real image315
Same model may have multiple batches, images only for reference.

IRF9910TRPBF

Part No IRF9910TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 10A/12A 8-SOIC
Datasheet
IRF9910TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A, 12A
Maximum Rds On at Id,Vgs 9.3 mOhm @ 12A, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 900pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017563-IRF9910TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9910TRPBF CAD Model

Description

The Infineon Technologies 017563-IRF9910TRPBF is a dual N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 10A, 12A @ 25°C
  • Maximum Rds on at Id,Vgs: 9.3mOhm @ 12A, 10V
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Input Capacitance: 900pF @ 10V
  • Maximum Power Dissipation: 2W
  • Package: 8-SO
  • Mounting Technology: SMD (SMT)
  • Supply and Demand Status: balanced

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53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
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MOQ: 22 pcs
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