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Same model may have multiple batches, images only for reference.
IRF9952QTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9952QTRPBF

Part No IRF9952QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8-SOIC
Datasheet
IRF9952QTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A, 2.3A
Maximum Rds On at Id,Vgs 100 mOhm @ 2.2A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 190pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046789-IRF9952QTRPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF9952QTRPBF CAD Model

Description

The Infineon Technologies 1046789-IRF9952QTRPBF is an N and P-channel FET with logic level gate feature.

  • Case/Package: 8-SO
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.5A and 2.3A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 190pF @ 15V
  • Maximum Rds on: 100 mOhm @ 2.2A, 10V
  • Category: Discrete Semiconductor Products
  • Status: obsolete with limited supply and demand

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2079 $58.2120
680+ $0.1709 $116.2120
1,050+ $0.1652 $173.4600
1,440+ $0.1605 $231.1200
1,870+ $0.1548 $289.4760
2,500+ $0.1386 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,000 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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