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Same model may have multiple batches, images only for reference.
IRF9953TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9953TRPBF

Part No IRF9953TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 2.3A 8-SOIC
Datasheet
IRF9953TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.3A
Maximum Rds On at Id,Vgs 250 mOhm @ 1A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 190pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017565-IRF9953TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9953TRPBF CAD Model

Description

Its supply and demand status is limited.

  • Design: standard
  • Package: 8-SO
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 2.3A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 190pF @ 15V
  • Maximum Rds On at Id,Vgs: 250 mOhm @ 1A, 10V
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5701 $59.8605
250+ $0.4679 $116.9750
385+ $0.4532 $174.4820
530+ $0.4386 $232.4580
685+ $0.4240 $290.4400
915+ $0.3801 $347.7915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,710 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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