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Same model may have multiple batches, images only for reference.
IRF9956PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9956PBF

Part No IRF9956PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 3.5A 8-SOIC
Datasheet
IRF9956PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 100 mOhm @ 2.2A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 190pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 60220-IRF9956PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9956PBF CAD Model

Description

The Infineon Technologies 60220-IRF9956PBF is a dual N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 3.5A @ 25°C
  • Maximum Rds on at Id,Vgs: 100mOhm @ 2.2A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 14nC @ 10V
  • Maximum Input Capacitance: 190pF @ 15V
  • Maximum Power Dissipation: 2W
  • Package: 8-SO
  • Mounting Technology: SMD (SMT)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3564 $51.6780
300+ $0.3339 $100.1700
465+ $0.3226 $150.0090
670+ $0.3000 $201.0000
870+ $0.2888 $251.2560
1,085+ $0.2775 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,510 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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