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Same model may have multiple batches, images only for reference.
IRFB23N15DPBF Real Image
Same model may have multiple batches, images only for reference.

IRFB23N15DPBF

Part No IRFB23N15DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 23A TO-220AB
Datasheet
IRFB23N15DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.8W (Ta), 136W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205336-IRFB23N15DPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB23N15DPBF CAD Model

Description

The Infineon Technologies IRFB23N15DPBF is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 150V and a continuous drain current of 23A at 25°C.

  • Power Dissipation: 3.8W (Ta) and 136W (Tc)
  • Package: TO-220AB
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id,Vgs: 90 mOhm @ 14A, 10V
  • Drive Voltage: 10V
  • Status: active production

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120+ $0.9656 $115.8720
190+ $0.9356 $177.7640
260+ $0.9055 $235.4300
330+ $0.8755 $288.9150
445+ $0.7854 $349.5030
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