The Infineon Technologies MOSFET is a powerful and efficient electronic component used in power management. With a Vds - Drain-Source Breakdown Voltage of 200V and Id - Continuous Drain Current of 24A, this N-Channel transistor is designed to handle high power loads.

• Vds - Drain-Source Breakdown Voltage: 200V
• Id - Continuous Drain Current: 24A
• FET Feature: Not specified
• Transistor Polarity: N-Channel
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Rds On (Maximum) @ Id, Vgs: 100mOhm @ 14A, 10V
• Gate Source Voltage(th) (Maximum) @ Id: 5.5V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 1960pF @ 25V
• Package: TO-220AB
• Manufacturer Pack Quantity: 50
• Power Dissipation (Maximum): 3.8W, 170W
• Temperature Range - Operating: -55°C ~ 175°C
• Alternative Parts (Cross-Reference): FQP34N20, IXTP32N20T, and STP30NF20