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Same model may have multiple batches, images only for reference.
IRFB3006PBF Real Image
Same model may have multiple batches, images only for reference.

IRFB3006PBF

Part No IRFB3006PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 195A TO-220AB / Trans MOSFET N-CH Si 60V 270A 3-Pin(3+Tab) TO-220AB Tube
Datasheet
IRFB3006PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 300nC @ 10V
Max Input Capacitance 8970pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 170A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040707-IRFB3006PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFB3006
Introduction Date October 06, 2008
ECCN EAR99
Country of Origin China, Republic of Korea, Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFB3006PBF CAD Model

Description

The Infineon Technologies IRFB3006PBF is a N-Channel MOSFET discrete semiconductor product.

  • Maximum Voltage: 60V
  • Continuous Drain Current at 25°C: 195A (Tc)
  • Mounting: through-hole
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 375W (Tc)
  • Maximum Rds On: 2.5 mOhm @ 170A, 10V
  • Units per Package: 500
  • Product Status: active

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