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IRFB4227PBF

Part No IRFB4227PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 65A TO-220AB
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 98nC @ 10V
Max Input Capacitance 4600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 46A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 090679-IRFB4227PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name IRFB4227
Introduction Date October 12, 2005
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFB4227PBF CAD Model

Description

The Infineon Technologies 090679-IRFB4227PBF is an N-channel MOSFET that is designed to operate with a voltage range of 10V.

  • Voltage Range: 10V
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 65A @ 25°C
  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Alternative Parts: STP80N20M5, IXTP86N20T, FDP2614, and SUP90140E-GE3

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7917 $51.4605
155+ $0.6496 $100.6880
240+ $0.6293 $151.0320
330+ $0.6090 $200.9700
425+ $0.5887 $250.1975
570+ $0.5278 $300.8460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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