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IRFB42N20DPBF Real Image IRFB42N20DPBF real image324
Same model may have multiple batches, images only for reference.
IRFB42N20DPBF Real Image IRFB42N20DPBF real image324
IRFB42N20DPBF Real Image IRFB42N20DPBF real image324
Same model may have multiple batches, images only for reference.

IRFB42N20DPBF

Part No IRFB42N20DPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 44A TO-220AB
Datasheet
IRFB42N20DPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 3430pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.4W (Ta), 330W (Tc)
Maximum Rds On at Id,Vgs 55 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069456-IRFB42N20DPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian IRFB42N20DPBF CAD Model

Description

The Infineon Technologies IRFB42N20DPBF is a N-channel MOSFET transistor that is designed for use in power management and industrial applications.

  • Maximum Power Dissipation: 2.4W @ Ta and 330W @ Tc
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 44A @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 140nC @ 10V
  • Maximum Input Capacitance: 3430pF @ 25V
  • Maximum Rds On: 55 mOhm @ 26A and 10V
  • Package: TO-220AB
  • Mounting: Through Hole
  • Supply and Demand Status: Limited

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