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IRFB7540PBF

Part No IRFB7540PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 60V 110A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.7V @ 100μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 4555pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 65A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1046825-IRFB7540PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB7540PBF CAD Model

Description

The Infineon Technologies IRFB7540PBF is an N-channel MOSFET that has a power dissipation of 160W (Tc).

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel MOSFET
  • Power Dissipation: 160W (Tc)
  • Win Source Part Number: 1046825-IRFB7540PBF
  • Packaging: Tube/Rail
  • Mounting: Through-Hole
  • Package: TO-220
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 5.1 mOhm @ 65A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6225 $52.9125
175+ $0.5824 $101.9200
270+ $0.5623 $151.8210
385+ $0.5221 $201.0085
500+ $0.5021 $251.0500
625+ $0.4820 $301.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,612 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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