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IRFB7740PBF

Part No IRFB7740PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 87A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.7V @ 100μA
Max Gate Charge 122nC @ 10V
Max Input Capacitance 4650pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 143W (Tc)
Maximum Rds On at Id,Vgs 7.3 mOhm @ 52A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046829-IRFB7740PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB7740PBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a maximum power dissipation of 143W (Tc).

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 87A (Tc) @ 25°C
  • Package: TO-220AB
  • Gate-Source Threshold Voltage: 3.7V @ 100μA
  • Maximum Gate Charge: 122nC @ 10V
  • Maximum Input Capacitance: 4650pF @ 25V
  • Maximum Rds On at Id,Vgs: 7.3 mOhm @ 52A, 10V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5108 $52.8780
85+ $1.2396 $105.3660
125+ $1.2009 $150.1125
175+ $1.1622 $203.3850
225+ $1.1234 $252.7650
300+ $1.0072 $302.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 343,900 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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