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FDMC0202S

Part No FDMC0202S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR
Sample
Rohs State Need to verify
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 22.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.15mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2705 pF @ 13 V
Power Dissipation (Max) 2.3W (Ta), 52W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (3.3x3.3)
Package / Case 8-PowerTDFN
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.29.0095
Win Source Part Number 871640-FDMC0202S
Ultra Librarian 3D Model Ultra Librarian FDMC0202S CAD Model

Description

The 871640-FDMC0202S is a power MOSFET belonging to the FETs, MOSFETs category. It is designed and manufactured by Fairchild/ON Semiconductor.

  • This MOSFET is an N-Channel type and features the PowerTrench® technology.
  • It has a drain-to-source voltage (Vdss) rating of 25V and a continuous drain current (Id) rating of 22.5A @ 25°C (Ta) and 40A @ 25°C (Tc).
  • The maximum on-resistance (Rds On) is 3.15mOhm @ 22.5A and 10V gate-source voltage (Vgs).
  • The gate-source threshold voltage (Vgs(th)) is a maximum of 3V @ 1mA drain current (Id).
  • The maximum power dissipation is 2.3W @ 25°C (Ta) and 52W @ 25°C (Tc).
  • This MOSFET is designed for surface mount applications and comes in an 8-PowerTDFN package.
  • The supplier device package is 8-PQFN (3.3x3.3).
  • The gate charge (Qg) is a maximum of 44nC @ 10V gate-source voltage (Vgs), and the input capacitance (Ciss) is a maximum of 2705pF @ 13V drain-source voltage (Vds).
  • The maximum gate-source voltage (Vgs) is ±20V.
  • The operating temperature range for this MOSFET is -55°C to 150°C (TJ).
  • The ECCN classification for this product is EAR99.
  • The HTSUS code for this MOSFET is 8542.29.0095.
  • The product is currently active and available for purchase.

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