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Same model may have multiple batches, images only for reference.
IRFH4255DTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH4255DTRPBF

Part No IRFH4255DTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 64A/105A PQFN
Datasheet
IRFH4255DTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 64A, 105A
Maximum Rds On at Id,Vgs 3.2 mOhm @ 30A, 10V
Gate-Source Threshold Voltage 2.1V @ 35μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1314pF @ 13V
Maximum Power Dissipation 31W, 38W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Win Source Part Number 1046863-IRFH4255DTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH4255DTRPBF CAD Model

Description

The Infineon Technologies IRFH4255DTRPBF is a dual N-channel logic level gate field-effect transistor (FET) designed for use in discrete semiconductor products.

  • Type: Dual N-channel logic level gate FET
  • Use: Discrete semiconductor products
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand: Sufficient
  • Maximum Power Dissipation: 31W and 38W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 64A and 105A
  • Maximum Rds On @ Id,Vgs: 3.2 mOhm @ 30A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9748 $58.4880
145+ $0.8004 $116.0580
225+ $0.7750 $174.3750
310+ $0.7508 $232.7480
400+ $0.7253 $290.1200
535+ $0.6503 $347.9105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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