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Same model may have multiple batches, images only for reference.
IRFH4257DTRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFH4257DTRPBF

Part No IRFH4257DTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 25A 24PQFN
Datasheet
IRFH4257DTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 25A
Maximum Rds On at Id,Vgs 3.4 mOhm @ 25A, 10V
Gate-Source Threshold Voltage 2.1V @ 35μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1321pF @ 13V
Maximum Power Dissipation 25W, 28W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Dual PQFN (5x4)
Win Source Part Number 1046864-IRFH4257DTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH4257DTRPBF CAD Model

Description

The Infineon Technologies IRFH4257DTRPBF FET is a high-performance device that is designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 25A @ 25°C
  • Channel: Dual N-channel
  • Gate: Logic level
  • Maximum Power Dissipation: 25W
  • Maximum Rds On: 3.4 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 2.1V @ 35μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Package: Dual PQFN (5x4)
  • Lifecycle Status: Obsolete (EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3248 $59.6160
110+ $1.0869 $119.5590
165+ $1.0534 $173.8110
230+ $1.0187 $234.3010
295+ $0.9852 $290.6340
395+ $0.8836 $349.0220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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