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Same model may have multiple batches, images only for reference.
IRFH5220TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5220TR2PBF

Part No IRFH5220TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.8A PQFN  /  N-Channel 200 V 3.8A (Ta), 20A (Tc) Surface Mount PQFN (5x6)
Datasheet
IRFH5220TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Package Cut Tape (CT),
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs 99.9mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 50 V
Mounting SMD (SMT)
Supplier Device Package PQFN (5x6)
Package / Case 8-VQFN Exposed Pad
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IRFH5220TR2PBF-ND,IRFH5220TR2PBFDKR,IRFH5220TR2PBFTR,SP001572556,IRFH5220TR2PBFCT
Standard Package 400
Win Source Part Number 1065542-IRFH5220TR2PBF
Ultra Librarian 3D Model Ultra Librarian IRFH5220TR2PBF CAD Model

Description

The Infineon Technologies IRFH5220TR2PBF is a MOSFET (Metal Oxide) transistor designed for discrete semiconductor products.

  • Mounting Technology: SMD (SMT)
  • FET Type: N-channel
  • Vgs(th) (Max) @ Id: 5V @ 100μA
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V
  • Package: 8-VQFN exposed pad
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
  • MSL Level: Unlimited
  • REACH: Unaffected
  • HTSUS: 8541.29.0095

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